The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2003

Filed:

Aug. 31, 2001
Applicant:
Inventors:

Jean Louise Vincent, Bethlehem, PA (US);

Mark Leonard O'Neill, Allentown, PA (US);

Howard Paul Withers, Jr., Breinigsville, PA (US);

Scott Edward Beck, Kutztown, PA (US);

Raymond Nicholas Vrtis, Allentown, PA (US);

Assignee:

Air Products and Chemicals, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.

Published as:
US2002142579A1; US6583048B2; ATE409717T1; DE60229077D1;

Find Patent Forward Citations

Vincent, Jean. (2003). Organosilicon precursors for interlayer dielectric films with low dielectric constants (U.S. Patent No. 6583048). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6583048

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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