The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Nov. 15, 2001
Applicant:
Inventors:
Lawrence MH Lui, Hsin-Chu, TW;
Mei-Hui Sung, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed an etch stop layer interposed between a first dielectric layer and second dielectric layer within a non active product region of a substrate, but not within an active product region of the substrate. Within the dual damascene method, an endpoint for forming a trench within a dual damascene aperture within the active product region is sensed by reaching the etch stop layer when forming a dummy trench within the non active product region.