The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2003

Filed:

Mar. 16, 2001
Applicant:
Inventors:

Masatoshi Kanamaru, Tsuchiura, JP;

Atsushi Hosogane, Tsuchiura, JP;

Yoshihige Endou, Tsuchiura, JP;

Ryuji Kouno, Tsuchiura, JP;

Hideo Miura, Tsuchiura, JP;

Shinji Tanaka, Tsuchiura, JP;

Hiroyuki Ohta, Tsuchiura, JP;

Akihiko Ariga, Kodaira, JP;

Naoto Ban, Tsuchiura, JP;

Hideyuki Aoki, Kodaira, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ; H01L 2/166 ;
U.S. Cl.
CPC ...
G01R 3/126 ; H01L 2/166 ;
Abstract

For an inspection tray, a silicon substrate including a beam or a diaphragm, a probe and wiring is used. To highly accurately position a chip to be inspected, a second substrate for alignment is disposed on the substrate. To position the probe having wiring disposed on the first substrate and the electrode pad of the chip to be inspected, a projection or a groove is formed in each of both substrates. Preferably, the projection or groove should be formed by silicon anisotorpic etching to have a (111) crystal surface. As another machining method, dry etching can be used for machining the positioning projection or groove. By using an inductively coupled plasma-reactive ion etching (ICP-RIE) device for the dry etching, a vertical column or groove can be easily machined.


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