The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Feb. 19, 2002
General Semiconductor, Inc., Melville, NY (US);
Abstract
A trench Schottky barrier and a method of making the same in which the rectifier has a semiconductor region having first and second opposing faces; the semiconductor region having a drift region of a first conductivity type adjacent the first face and a cathode region of the first conductivity type adjacent the second face; the drift region having a lower net doping concentration than that of the cathode region. The rectifier also has a plurality of trenches extending into the semiconductor region from the first face; the trenches defining a plurality of mesas within the semiconductor region, and the trenches forming a plurality of trench intersections. The rectifier further includes an oxide layer covering the semiconductor region on the bottoms of the trenches and on lower portions of sidewalls of the trenches, a polysilicon region disposed over the oxide layer within the trenches, and insulating regions at the trench intersections that cover a portion of the polysilicon region and a portion of the oxide layer.