The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
May. 18, 2000
Applicant:
Inventors:
Jiong-Ping Lu, Dallas, TX (US);
Qi-Zhong Hong, Dallas, TX (US);
Duane E. Carter, Plano, TX (US);
Yung Liu, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of isolating an exposed conductive surface. An aluminum layer ( ) is selectively formed over the exposed conductive ( ) surface (e.g., Cu) but not over the surrounding dielectric ( ) surface using a thermal CVD process. The aluminum layer ( ) is then oxidized to form a thin isolating aluminum-oxide ( ) over only the conductive surface. The isolating aluminum-oxide provides a barrier for the Cu while taking up minimal space and reducing the effective dielectric constant.