The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Nov. 07, 2001
Wen-Ting Chu, Hsin-Chu, TW;
Di-Son Kuo, Hsin-Chu, TW;
Jack Yeh, Hsin-Chu, TW;
Chia-Ta Hsieh, Tainan, TW;
Chrong-Jung Lin, Hsin-Tien, TW;
Sheng-Wei Tsaur, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for improving the endurance and robustness of high voltage NMOS devices by forming a conductive field plate at the edge of a shallow trench isolation region at the drain side only is described. Active areas are separated by isolation regions in a substrate. A gate oxide layer is grown on the active areas. A conducting layer is deposited overlying the gate oxide layer and patterned to form gate electrodes in the active areas and to form conductive strips overlapping both the active areas and the isolation areas at an isolation's edge on a drain side of the active areas wherein the conductive strips reduce the electric field at the isolation's edge in the fabrication of an integrated circuit device.