The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2003

Filed:

Mar. 14, 2000
Applicant:
Inventors:

Qing Ma, San Jose, CA (US);

Jin Lee, Palo Alto, CA (US);

Jun Fei Zheng, Mountain View, CA (US);

Giang Dao, Fremont, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
Abstract

A method for making a photolithographic mask. The method comprises forming a film on a substrate that deforms the substrate, and applying a deformation reducing agent to the substrate to reduce the amount of deformation that the film caused. In a preferred embodiment, the deformation reducing agent comprises one or more films, which are formed on one side of the substrate, that balance the substrate deformation effect of one or more films that are deposited on the other side of the substrate. The film or films that constitute the deformation reducing agent may be similar to, or different from, an absorption film and/or any other films deposited on the substrate or on the absorption film.


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