The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Mar. 16, 2001
Chih-Kung Chang, Hsin-Chu, TW;
Kuang-Peng Lin, Hsin-Chu, TW;
Yu-Kung Hsiao, Tao-Yuan, TW;
Fu-Tien Weng, Taw-Yuan, TW;
Bii-Junq Chang, Hsin-Chu, TW;
Kuo-Liang Lu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.