The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Aug. 25, 2000
Akella V. S. Satya, Milpitas, CA (US);
David L. Adler, San Jose, CA (US);
Bin-Ming Benjamin Tsai, Saratoga, CA (US);
Neil Richardson, Palo Alto, CA (US);
David J. Walker, Sunol, CA (US);
KLA-Tencor, San Jose, CA (US);
Abstract
Disclosed is, a method for detecting electrical defects on test structures of a semiconductor die. The semiconductor die includes a plurality of electrically-isolated test structures and a plurality of non-electrically-isolated test structures. Voltages are established for the plurality of electrically-isolated test structures. These voltages are different than the voltages of the plurality of non-electrically-isolated test structures. A region of the semiconductor die is continuously inspected in a first direction thereby obtaining voltage contrast data indicative of whether there are defective test structures. The voltage contrast data is analyzed to determine whether there are one or more defective test structures.