The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Apr. 16, 2002
Lu You, San Jose, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Jeremias D. Romero, Hayward, CA (US);
Pin-Chin Connie Wang, Menlo Park, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a metal or metal nitride layer interface between a copper layer and a silicon nitride layer can include providing a metal organic gas or metal/metal nitride precursor over a copper layer, forming a metal or metal nitride layer from reactions between the metal organic gas or metal/metal nitride precursor and the copper layer, and depositing a silicon nitride layer over the metal or metal nitride layer and copper layer. The metal or metal nitride layer can provide a better interface adhesion between the silicon nitride layer and the copper layer. The metal layer can improve the interface between the copper layer and the silicon nitride layer, improving electromigration reliability and, thus, integrated circuit device performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile