The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Nov. 15, 2000
Atul Champaklal Ajmera, Wappingers Falls, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Roy Arthur Carruthers, Stormville, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Paul Michael Kozlowski, Hopewell Junction, NY (US);
Christian Lavoie, Ossining, NY (US);
Joseph Scott Newbury, Tarrytown, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor substrate (and resultant structure), includes providing a semiconductor substrate to be silicided including a source and drain formed therein on respective sides of a gate, depositing a metal film over the gate, source and drain regions, reacting the metal film with Si at a first predetermined temperature, to form a metal-silicon alloy, etching the unreacted metal, depositing a silicon film over the source drain and gate regions, annealing the substrate at a second predetermined temperature, to form a metal-Si alloy, and selectively etching the unreacted Si.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile