The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Dec. 29, 1995
Applicant:
Inventors:
S. M. Reza Sadjadi, San Jose, CA (US);
Mansour Moinpour, Cupertino, CA (US);
Te Hua Lin, Los Gatos, CA (US);
Farhad K. Moghadam, Los Gatos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1461 ;
Abstract
A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.
Quick Actions:
Sadjadi, S. M. Reza. (2002). Contact and via fabrication technologies (U.S. Patent No. 6495470). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6495470
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile