The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Apr. 18, 2001
Applicant:
Inventors:
Kuo-Liang Lu, Hsin-Chu, TW;
Yung-Chih Yao, Miao-Li-Xuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 ; H01L 2/100 ; C23C 1/600 ;
U.S. Cl.
CPC ...
C23F 1/00 ; H01L 2/100 ; C23C 1/600 ;
Abstract
A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C. and about 150° C.
Published as: