The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Oct. 19, 1998
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The present invention provides a method improving the adhesion between inter metal dielectric (IMD) layers by performing a HF dip etch to treat the surface of an oxide, silicon nitride or Silicon oxynitride insulating layer before an overlying low-K layer is formed. The present invention provides a method of fabricating a low-K IMD layer over an oxide, Silicon oxynitride (SiON), or nitride IMD layer with improved adhesion. First, a 1st inter metal dielectric (IMD) layer is formed over a substrate. Next, the invention's novel HF dip etch is performed on the 1st IMD layer to form a treated surface . Next, a 2nd BMD layer composed of a low-K material is formed over the rough surface of the 1st IMD layer . The treated surface improves the adhesion between a 1st IMD layer oxide (oxide, SiN or SiON) and a low k layer. Subsequent photoresist strip steps do not cause the 1st IMI layer and the 2nd IMD layer (low-K dielectric) to peel.