The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Nov. 23, 1999
Ching-Ping Fang, Chandler, AZ (US);
Joseph T. Hillman, Scottsdale, AZ (US);
Tokyo Electronic Limited, Tokyo, JP;
Abstract
A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.