The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
May. 23, 2001
Applicant:
Inventors:
Chi-Feng Cheng, Yuan-Lin Cheng, TW;
Cheng-Chen Calvin Hsueh, Taipei, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of forming a damascene structure. A dielectric layer is formed over a substrate. The dielectric layer is a silicon oxynitride layer having a refractivity between 1.55 and 1.74. An opening is formed in the dielectric layer. A metallic layer that covers the substrate and completely fills the opening is formed. A chemical-mechanical polishing operation is conducted to remove excess metallic material outside the opening using the dielectric layer as a polishing stop layer. The dielectric layer has a polishing rate less than that of the metallic layer.