The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Nov. 08, 1999
Applicant:
Inventors:
Chin-Yi Huang, Hsinchu County, TW;
Yun Chang, Hsinchu County, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
Systems and methods are described for providing an array of buried transistor cells with at least one contact array structure. A contact array structure for a buried type transistor array includes a first diffusion bit line coupled to the plurality of transistors; a first plurality of contacts coupled to the source diffusion bit line; and a first conductor coupled to the first plurality of contacts. The systems and methods provide advantages in that the diffusion line resistance is reduced, the read current and speed are reduced, and the voltage-time distribution is tightened when writing by hot electron programming.