The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 22, 1999
James D. Bernstein, Beverly, MA (US);
Peter L. Kellerman, Essex, MA (US);
Alec S. Denholm, Lincoln, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing . The outgassed material is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.