The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Jan. 31, 2001
J. Brett Rolfson, Boise, ID (US);
Annette L. Martin, Boise, ID (US);
Ardavan Niroomand, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si N outwardly of the substrate, the outer Si N layer having an outer surface; c) covering the outer Si N surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si N surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si N layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si N outwardly of the substrate, the outer Si N layer having an outer surface; ii) transforming the outer Si N surface into a material effective to promote adhesion of photoresist to the Si N layer; and iii) depositing a layer of photoresist over the transformed outer Si N surface, the photoresist adhering to the Si N layer with a greater degree of adhesion than would otherwise occur if the outer Si N surface were not transformed.