The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Mar. 07, 2001
Applicant:
Inventors:
Tetsuya Ishikawa, Santa Clara, CA (US);
Kaveh Niazi, Santa Clara, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Canfeng Lai, Fremont, CA (US);
Robert Duncan, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/435 ;
U.S. Cl.
CPC ...
C23C 1/435 ;
Abstract
A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
Published as: