The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Jun. 20, 2000
Arne W. Ballantine, Round Lake, NY (US);
Douglas A. Buchanan, Cortlandt Manor, NY (US);
Eduard A. Cartier, New York, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Matthew W. Copel, Yorktown Heights, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
Evgeni P. Gousev, Mahopac, NY (US);
Fenton Read McFeely, Ossining, NY (US);
Joseph S. Newbury, Tarrytown, NY (US);
Harald F. Okorn-Schmidt, Putnam Valley, NY (US);
Patrick R. Varekamp, Croton-on-Hudson, NY (US);
Theodore H. Zabel, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 Å; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.