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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6444592 B1

PDFFull Text
Date of Patent:
Sep. 03, 2002

Filed:

Jun. 20, 2000

Interfacial oxidation process for high-k gate dielectric process integration

Applicant:
Inventors:

Arne W. Ballantine, Round Lake, NY (US);

Douglas A. Buchanan, Cortlandt Manor, NY (US);

Eduard A. Cartier, New York, NY (US);

Kevin K. Chan, Staten Island, NY (US);

Matthew W. Copel, Yorktown Heights, NY (US);

Christopher P. D'Emic, Ossining, NY (US);

Evgeni P. Gousev, Mahopac, NY (US);

Fenton Read McFeely, Ossining, NY (US);

Joseph S. Newbury, Tarrytown, NY (US);

Harald F. Okorn-Schmidt, Putnam Valley, NY (US);

Patrick R. Varekamp, Croton-on-Hudson, NY (US);

Theodore H. Zabel, Yorktown Heights, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Margaret A. Pepper

Primary Examiner:

Michael Sherry

Assistant Examiner:

Lisa Kilday

Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract

A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 Å; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.

Find Patent Forward Citations

Quick Actions:

Ballantine, Arne. (2002). Interfacial oxidation process for high-k gate dielectric process integration (U.S. Patent No. 6444592). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6444592

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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