The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
May. 25, 1999
Applicant:
Inventors:
Hung-Sheng Chen, San Jose, CA (US);
Unsoon Kim, San Clara, CA (US);
Yu Sun, Saratoga, CA (US);
Chi Chang, Redwood City, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Mark Randolph, San Jose, CA (US);
Tatsuya Kajita, Cupertino, CA (US);
Angela Hui, Fremont, CA (US);
Fei Wang, San Jose, CA (US);
Mark Chang, Los Altos, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ; H01L 2/144 ;
Abstract
A method of forming a contact in a flash memory device utilizes a local interconnect process technique. The local interconnect process technique allows the contact to butt against or overlap a stacked gate associated with the memory cell. The contact can include tungsten. The stacked gate is covered by a barrier layer which also covers the insulative spacers.