The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2002

Filed:

Sep. 21, 1998
Applicant:
Inventors:

Takashi Akahori, Hachioji, JP;

Masaki Tozawa, Fussa, JP;

Yoko Naito, Sagamihara, JP;

Risa Nakase, Sagamihara, JP;

Shuichi Ishizuka, Tsukui-Gun, JP;

Masahide Saito, Setagaya-Ku, JP;

Tadashi Hirata, Sagamihara, JP;

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 6/00 ;
U.S. Cl.
CPC ...
B08B 6/00 ;
Abstract

A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO which scatters. On the other hand, F scatters as F . Thus, the CF film is removed.


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