The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Nov. 20, 2001
Ming-Huei Lui, Hsin-chu, TW;
Mei-Hui Sung, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed a bottom etch stop layer formed of a first material and an intermediate etch stop layer formed as a laminate of a second material having formed thereupon a third material. Within the method, the second material serves as an etch stop for the first material and the third material, which may be identical materials. Within the method, there may be etched completely through the bottom etch stop layer to reach a contact region formed there beneath while not etching completely through the intermediate etch stop layer to reach a first dielectric layer formed there beneath.