The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jan. 26, 2001
Applicant:
Inventors:
James Yong Meng Lee, Singapore, SG;
Ying Keung Leung, Aberdeen, HK;
Yelehanka Ramachandramurthy Pradeep, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Lap Chan, San Francisco, CA (US);
Elgin Quek, Singapore, SG;
Ravi Sundaresan, San Jose, CA (US);
Yang Pan, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for a vertical transistor by selective epi deposition to form the conductive source, drain, and channel layers. The conductive source, drain, and channel layers are preferably formed by a selective epi process. Dielectric masks define the conductive layers and make areas to form vertical contacts to the conductive S/D and channel layers.