The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Sep. 12, 2000
Applicant:
Inventors:
Chishio Koshimizu, Nirasaki, JP;
Jun Ooyabu, Nirasaki, JP;
Hideki Takeuchi, Tokyo, JP;
Akira Koshiishi, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K 1/000 ;
U.S. Cl.
CPC ...
B23K 1/000 ;
Abstract
A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.