The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2002

Filed:

Feb. 10, 1999
Applicant:
Inventors:

Douglas Duane Coolbaugh, Essex Junction, VT (US);

James Stuart Dunn, Jericho, VT (US);

Peter John Geiss, Underhill, VT (US);

Douglas Brian Hershberger, Essex Junction, VT (US);

Stephen Arthur St. Onge, Essex Junction, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract

Reliable metal oxide semiconductor (MOS) devices which exhibit little or no oxide breakdown at the R edge during device biasing are provided. The improved reliability is obtained by forming a contact to the polysilicon top conductor over a substantially thicker portion of the dielectric region. A method of fabricating the improved CMOS devices is also disclosed herein.


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