The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Apr. 12, 2000
Yu-Kung Hsiao, Tao-Yuan, TW;
Sheng-Liang Pan, Hsin Chu, TW;
Bi-Cheng Chang, Hsin Chu, TW;
Kuo-Liang Lu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for making long focal length micro-lens for color filters in CMOS image sensor applications and device made by the method are described. In the method, a layer of micro-lens material is first spin coated on top of a color filter, patterned by a photolithographic method into at least four discrete regions, and preferably at least nine discrete regions for each micro-lens with a pre-set spacing therein between. The discrete regions allow a smaller volume of micro-lens material to be used for forming the micro-lens in a subsequent reflow process. The micro-lens formed by the present invention novel method has a focal length of at least 7 &mgr;m, and preferably at least 10 &mgr;m such that a 0.35 &mgr;m technology CMOS image sensor utilizing two or three layers of metal conductors can be formed by the present invention method.