The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Nov. 14, 2000
Paul R. Besser, Austin, TX (US);
Errol Todd Ryan, Austin, TX (US);
Frederick N. Hause, Austin, TX (US);
Frank Mauersberger, Austin, TX (US);
William S. Brennan, Austin, TX (US);
John A. Iacoponi, Austin, TX (US);
Peter J. Beckage, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming conductive contacts or an integrated circuit device is disclosed herein. In one embodiment, the method comprises forming a transistor above a semiconducting substrate, and forming a first layer comprised of an orthosilicate glass material above the transistor and the substrate. The method further comprises forming a second layer comprised of an insulating material above the first layer, and performing at least one etching process to define an opening in the second layer for a conductive contact to be formed therein, wherein the first layer comprised of an orthosilicate glass material acts as an etch stop layer during the etching of the opening in the second layer.