The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Sep. 08, 1999
Applicant:
Inventors:
Koji Harada, Kumamoto-ken, JP;
Ryoichi Uemura, Kumamoto-ken, JP;
Assignee:
Tokyo Electron Limited, Tokyo-tu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ;
U.S. Cl.
CPC ...
C23C 1/600 ;
Abstract
Process gas supply/stop operations are intermittently performed. As the hydrophobic process progresses, the temperature of a gas contract portion of a wafer lowers. While the hydrophobic process stops, the temperature of the gas contact portion of the wafer rises to the original temperature. Thereafter, the hydrophobic process resumes. Thus, while the temperature of the gas contact portion of wafer is suppressed from largely lowering, the hydrophobic process can be performed. Thus, non-uniformity of the hydrophobic process on the front surface of the wafer is reduced.