The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Dec. 08, 1998
Applicant:
Inventors:
C. C. Hsue, Hsinchu, TW;
Wei-Chung Chen, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of forming a local interconnect is provided. A semiconductor is provided. An isolation structure, a transistor and a conductive layer are formed on the substrate. A dielectric layer with an opening is formed over the substrate. A part of the dielectric layer is removed by a photolithography and etching process to form a via opening to expose a part of the gate of the transistor or a part of the conductive layer. A conformal barrier layer is formed in the via opening and overflows the dielectric layer. A conductive plug is formed in the via opening. The barrier layer is patterned to form a local interconnect.