The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Sep. 14, 2000
Luciano Mule′Stagno, St. Louis, MO (US);
Robert J. Falster, London, GB;
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for revealing agglomerated intrinsic point defects in a single crystal silicon sample. The process includes heat-treating the single crystal silicon sample, cooling the heat-treated sample and then coating a surface of the cooled sample with a composition containing a metal which is capable of decorating agglomerated intrinsic point defects. The coated sample is then heat-treated in an inert atmosphere at a temperature and for a time sufficient to diffuse the metal into the sample. A non-defect delineating etch is performed, followed by a defect delineating etch to reveal the decorated agglomerated intrinsic point defects.