The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Nov. 26, 1997
Applicant:
Inventors:
Paul Mertens, Haacht, BE;
Michael McGeary, Meriden, CT (US);
Hessel Sprey, Leuven, BE;
Karine Kenis, Kessel-Lo, BE;
Marc Schaekers, Heverlee, BE;
Marc Heyns, Linden, BE;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl , said Cl being generated by an organic chlorine-carbon source, particularly oxalyl chloride. This method is directed to the growth of (ultra) thin silicon oxides and/or the cleaning of a substrate using a low oxidation power. Consequently the method disclosed is especially suited for temperature below ° C. and for oxidation ambients containing only small amounts of oxygen.
Published as: