Michael McGeary

Title: Innovations of Michael McGeary

Introduction

Michael McGeary is an accomplished inventor based in Meriden, Connecticut. He holds a patent that showcases his expertise in the field of silicon technology. His innovative approach has contributed to advancements in the method of growing thin silicon oxides.

Latest Patents

McGeary's notable patent is titled "Method for growing thin silicon oxides on a silicon substrate using chlorine precursors." This patent describes a method for growing a silicon oxide layer on a silicon substrate through thermal oxidation in a furnace. The process utilizes a gaseous mixture that includes oxygen and chlorine, with chlorine generated from an organic chlorine-carbon source, specifically oxalyl chloride. This method is particularly effective for the growth of ultra-thin silicon oxides and for cleaning substrates using low oxidation power. It is designed for temperatures below a certain threshold and oxidation environments with minimal oxygen.

Career Highlights

Throughout his career, McGeary has demonstrated a commitment to innovation in silicon technology. His work has led to significant advancements in the efficiency and effectiveness of silicon oxide growth processes. His contributions have been recognized within the industry, establishing him as a key figure in this specialized field.

Collaborations

Michael McGeary has collaborated with notable professionals in his field, including Paul Mertens and Hessel Sprey. These collaborations have further enhanced his research and development efforts, leading to impactful innovations.

Conclusion

Michael McGeary's contributions to the field of silicon technology through his patented methods exemplify his innovative spirit and dedication to advancing the industry. His work continues to influence the development of new technologies in this area.