The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Jul. 07, 1999
United Microelectronics Corp., Hsinchu City, TW;
Abstract
A method of manufacturing a bottom electrode of a capacitor. A substrate has a contact pad formed thereon, a first dielectric layer is formed on the contact pad, and a node contact penetrates through the first dielectric layer and electrically couples to the contact pad. A second dielectric layer is formed on the first dielectric layer and the node contact. A third dielectric layer is formed on the second dielectric layer. A fourth dielectric layer is formed on the third dielectric layer. A trench is formed to penetrate through the fourth, the third and the second dielectric layer and to expose a surface of the node contact. A conductive layer is formed on the fourth dielectric layer and a sidewall and a bottom of the trench. A fifth dielectric layer is formed on the conductive layer, wherein the fifth dielectric layer fills the trench. A portion of the fifth dielectric layer and a portion of the conductive layer are removed until a surface of the fourth dielectric layer is exposed. The remaining fifth dielectric layer and the fourth dielectric layer are removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile