The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Apr. 05, 2000
Bich-Yen Nguyen, Austin, TX (US);
William J. Taylor, Jr., Round Rock, TX (US);
Philip J. Tobin, Austin, TX (US);
David L. O'Meara, Austin, TX (US);
Percy V. Gilbert, Austin, TX (US);
Yeong-Jyh T. Lii, Austin, TX (US);
Victor S. Wang, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
In accordance with one embodiment of the present invention, a method is disclosed for forming a semiconductor device having an isolation region ( ). A dielectric layer ( ) is deposited and etched to form isolation regions ( ) having top portions that are narrower than their bottom portions, thereby a tapered isolation region is formed. Active regions ( ) are formed using an epitaxial process in the regions between the isolation regions. The resulting active regions ( ) have a greater amount of surface area near a top portion, than near a bottom portion. Transistors ( ) having opposite polarities are formed within the active areas.