The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Aug. 13, 1999
Applicant:
Inventors:
Hsein-Ta Chung, Tai-Chung, TW;
Yi-Yu Hsu, Taipei, TW;
Tong-Yu Chen, Hsin-Chu, TW;
Tri-Rung Yew, Hsin-Chu Hsein, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 ; G03F 7/38 ;
U.S. Cl.
CPC ...
G03F 7/36 ; G03F 7/38 ;
Abstract
The present invention relates to a method of removing a photo-resist layer from a semiconductor wafer. The semiconductor wafer comprises an inter-metal dielectric layer (IMD), and a photo-resist layer positioned on the IMD. The method comprises performing a dry cleaning process by injecting a nitrogen-containing gas into an oxygen-free environment and utilizing a plasma reaction to remove most of the photo-resist layer, and performing a wet cleaning process to completely remove the photo-resist layer.