The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Feb. 23, 2000
Vladislav Vassiliev, Singapore, SG;
John Leonard Sudijono, Singapore, SG;
Yelehanka Ramachandramurthy Pradeep, Singapore, SG;
Jie Yu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for fabricating a silicon oxide and silicon glass layers at low temperature using High Density Plasma CVD with silane or inorganic or organic silane derivatives as a source of silicon, inorganic compounds containing boron, phosphorus, and fluorine as a doping compounds, oxygen, and gas additives is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a silicon source to gas additive mole ratio, which is maintained depending on the used compound and deposition process conditions. Inorganic halide-containing compounds are used as gas additives. This feature provides the reaction conditions for the proper reaction performance that allows a deposition of a film with. good film integrity and void-free gap-fill within the steps of device structures.