The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2002

Filed:

Mar. 20, 2000
Applicant:
Inventors:

Takayuki Abe, Kawasaki, JP;

Hirohito Anze, Kawasaki, JP;

Susumu Oogi, Kawasaki, JP;

Mitsuko Shimizu, Machida, JP;

Hideo Inoue, Numazu, JP;

Takashi Saito, Numazu, JP;

Toru Tojo, Naka-gun, JP;

Takashi Kamikubo, Kawasaki, JP;

Yoshiaki Hattori, Tokyo, JP;

Tomohiro Iijima, Kawasaki, JP;

Noriaki Nakayamada, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
Abstract

A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.


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