The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2002
Filed:
Mar. 14, 2000
Applicant:
Inventors:
Gerard Chris D'Couto, San Jose, CA (US);
George Tkach, Santa Clara, CA (US);
Jeff Dewayne Lyons, Hayward, CA (US);
Max Biberger, Palo Alto, CA (US);
Kwok Fai Lai, Palo Alto, CA (US);
Jean Lu, Palo Alto, CA (US);
Kaihan Ashtiani, Sunnyvale, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/435 ;
U.S. Cl.
CPC ...
C23C 1/435 ;
Abstract
Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.