The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Apr. 25, 2000
Yoshikazu Nagamura, Tokyo, JP;
Kazuhito Suzuki, Hyogo, JP;
Kunihiro Hosono, Tokyo, JP;
Nobuyuki Yoshioka, Tokyo, JP;
Other;
Abstract
A corrected irradiation region ( ) to be irradiated with a laser light under given output conditions to remove an opaque extension defect ( ) is set to include: {circumflex over (1)} an irradiation region ( A) containing the opaque extension defect ( ) and having widths w and w and {circumflex over (2)} a pattern repaired region ( B) having the width w and extending in the negative direction in a first direction D by the absolute value of a quantity of bias offset of repairing &Dgr;w from the connection between the opaque extension defect ( ) and the pattern edge ( E). The quantity of correction offset &Dgr;w is set so that the dimensional variation rate of the resist pattern transferred falls within a range permitted for the device quality. Part of the pattern edge ( E) is missing by the width |&Dgr;w| after the irradiation of laser light. When the design pattern dimension as dimensional value on the photomask is reduced to about 1 &mgr;m, for example, it is thus possible to alleviate the adverse effect of the dimensional variation of the resist pattern on the device quality that is caused by a reduction in transmittance in the repaired defect portion.