The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
Feb. 18, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for improving the adhesion, between an overlying insulator layer, and an underlying low K layer, used for forming a composite layer, damascene mask pattern, wherein the damascene mask pattern is used as an interlevel dielectric layer, between metal interconnect structures, has been developed. A treatment, comprised of aqueous NH,OH solutions, or of UV curing procedures, is performed on the top surface of the low K layer, prior to deposition of the overlying insulator layer. The treatment, resulting in a roughened top surface of the low K layer, allows removal of masking photoresist shapes, to be aggressively accomplished using wet strippers, without adhesion loss at the insulator—low K layer interface.