The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Mar. 13, 2000
Yai-Fen Lin, Taichung, TW;
Chia-Ta Hsieh, Tainan, TW;
Hung-Cheng Sung, Hsinchu, TW;
Chuang-Ke Yeh, Hsin-Chu, TW;
Di-Son Kuo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method is provided for forming a split-gate flash memory cell having reduced size, increased capacitive coupling and improved data retention capability. A split gate cell is also provided with appropriate gate oxide thicknesses between the substrate and the floating gate and between the float gate and the control gate along with an extra thin nitride layer formed judiciously over the primary gate oxide layer in order to overcome the problems of low data retention capacity of the floating gate and the reduced capacitive coupling between the floating gate and the source of prior art.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile