The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Jun. 19, 2000
Applicant:
Inventors:
Shiou-han Liaw, Hsin Chu, TW;
Yau-feng Lo, Hsin Chu, TW;
Po-lung Chuang, Hsin Chu, TW;
Jia-ren Chen, Hsin Chu, TW;
Yen-hung Lai, Hsin Chu, TW;
Calvin Wu, Hsin Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18242 ;
Abstract
A method for fabricating poly-spacers used in a semiconductor substrate, comprising: forming an undoped first polysilicon layer on the semiconductor substrate; performing a first ion implantation with a first angle to implant impurities into the first polysilicon layer; performing a second ion implantation with a second angle to implant the impurities into the first polysilicon layer; forming a second polysilicon layer on the first polysilicon layer; and etching the first polysilicon layer and the second polysilicon layer to form spacers.