The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
May. 22, 1998
Chih-Chiang Tu, Tauyen, TW;
Ren-Guey Hsieh, Ping-Tung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A methodolgy is described which allows a variety of optical proximity corrections to be added to a mask pattern at low cost and with a view to minimizing the number of electron beam exposures that will be needed later when the reticle is prepared. The basic approach is to add serifs and/or hammerheads to the vertices of the mask pattern on the basis of a small number of simple rule checks. The first check is for the presence of an overlapping pattern at the next level. If this is not detected noting is added at the vertex in question. If some overlap is etected, a predefined search area (at the same mask level) is quickly scanned and, if another stripe is found to be located within a preset distance, serifs are added at the appropriate vertices. If no stripe was found, a second search area, further away, is scanned and if a neighbouring stripe is detected this time, larger serifs are added. If the second search also comes up empty, a hammerhead is added at the appropriate line end. The method may be refined by using additional searches, if so desired.