The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Sep. 30, 1998
Mark I. Gardner, Cedar Creek, TX (US);
Robert Paiz, Austin, TX (US);
Thomas E. Spikes, Jr., Round Rock, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a semiconductor device includes forming a first gate electrode over a substrate and then forming a spacer on at least one sidewall of the first gate electrode. A second gate electrode is formed over the substrate after forming the spacer. A first dopant is implanted into the substrate to form a first heavily doped active region adjacent to the spacer and spaced from the first gate electrode and a second heavily doped active region adjacent to the second gate electrode. The spacer is then removed and a second dopant is implanted into the substrate to form a lightly doped active region adjacent to the first gate electrode. In some instances, gate dielectrics for the first and second gate electrodes are formed using different materials and/or having different thicknesses.