The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Nov. 22, 1999
Xin Zhang, Singapore, SG;
Kin Wai Tang, Singapore, SG;
Carol Goh, Singapore, SG;
Soon Ee Neoh, Hillview Heights, SG;
Chartered Semiconductor Manufacturing, LTD, Singapore, SG;
Abstract
In one embodiment, a spacer layer (,) is formed overlying a gate electrode (,), which is formed on a semiconductor substrate (,). The spacer layer (,) is then etched to form a sidewall spacer (,). A scanning electron microscope (SEM) is then used to measure the width of the sidewall spacer (,). The measured value for the width of the sidewall spacer (,) is then used to adjust a subsequent integrated circuit fabrication process, such as a spacer etch process, an implant process, or an anneal process. As a result, transistors with improved drain saturation currents are fabricated.