The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Jul. 21, 1999
Matteo Patelmo, Bernareggio, IT;
Nadia Galbiati, Seregno, IT;
Giovanna Dalla Libera, Monza, IT;
Bruno Vajana, Bergamo, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A manufacturing process that includes, in succession: depositing a gate oxide layer on a silicon substrate defining a transistor area and a resistor area; depositing a multicrystal silicon layer on the gate oxide layer; removing selective portions of the multicrystal silicon layer to form a gate region over the transistor area and a protective region completely covering the resistor area; forming source and drain regions in the transistor area, laterally to the gate region; forming silicide regions on and in direct contact with the source and drain regions, the gate region and the protective region; removing selective portions of the protective region to form a delimitation ring; and implanting ionic dopants in the resistor area, inside the area defined by the protective ring, to form a lightly doped resistor which has no silicide regions directly on it.