The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Aug. 11, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new process is provided to create openings and interconnect patterns for the dual damascene structure. Four layers of dielectric are sequentially deposited over a pattern of interconnect metal. The via hole pattern is defined, the interconnect line pattern is next defined. The via pattern is etched though the upper layer of dielectric and through the stop layer. Only one etch processing step is used to create the desired vias and the desired interconnect line pattern. After the interconnect patterns and vias have been created in the four layers of dielectric, a barrier layer is blanket deposited, the metal is deposited for the dual damascene structure and the interconnect line pattern and polished.