The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2001

Filed:

Dec. 16, 1999
Applicant:
Inventors:

Katsuhisa Kugimiya, Narita, JP;

Takanori Nishizawa, Chiba, JP;

Daisuke Tajima, Chiba, JP;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such as CF,, NF,, SF,, and the like) and oxygen.


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